Customization: | Available |
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Application: | Artificial Intelligence, Automotive Electronics, Consumer Electronics, Industry, Integrated Circuit, Solar Cell |
Conductivity Type: | Bipolar Conduction |
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62 mm 1200 V, 200 A dual switch IGBT modules with fast TRENCHSTOP™ IGBT3 and Emitter Controlled high efficiency diode. Also available as variation with common emitter: FF200R12KT3_E.
Summary of Features
Benefits
Parametrics | FF200R12KT3 |
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Configuration | Dual |
Dimensions (width) | 61.4 mm |
Dimensions (length) | 106.4 mm |
Housing | 62 mm |
IC(nom) / IF(nom) | 200 A |
IC max | 200 A |
Qualification | Industrial |
Technology | IGBT3 - T3 |
VCE(sat) (Tvj=25°C typ) | 1.7 V |
VF (Tvj=25°C typ) | 1.65 V |
Voltage Class max | 1200 V |
Sales Product Name | FF200R12KT3 |
OPN | FF200R12KT3HOSA1 |
Product Status | not for new design |
Infineon Package name | AG-62MMHB |
Standard Package name | |
Completely lead free | yes |
Halogen free | no |
RoHS compliant | yes |
Packing Size | 10 |
Packing Type | TRAY |
Moisture Level | NA |
Moisture Packing | NON DRY |