Customization: | Available |
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Application: | Artificial Intelligence, Automotive Electronics, Consumer Electronics, Industry, Integrated Circuit, Solar Cell |
Conductivity Type: | Bipolar Conduction |
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1700 V, 800 A IHMB 130 mm Diode Module with AlSiC base-plate and Emitter Controlled 4 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT4 products.
Summary of Features
Benefits
Parametrics | DD800S17H4_B2 |
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Configuration | Diodes |
Dimensions (width) | 140 mm |
Dimensions (length) | 130 mm |
Features | 200% PC |
Housing | IHM B |
IC(nom) / IF(nom) | 800 A |
IC max | 800 A |
Qualification | Industrial ; Traction |
Technology | Diode |
VCES / VRRM | 1700 V |
VF (Tvj=25°C typ) | 1.8 V |
Voltage Class max | 1700 V |
Sales Product Name | DD800S17H4_B2 |
OPN | DD800S17H4B2BOSA2 |
Product Status | active and preferred |
Infineon Package name | AG-IHMB130 |
Standard Package name | |
Completely lead free | no |
Halogen free | no |
RoHS compliant | yes |
Packing Size | 2 |
Packing Type | TRAY |
Moisture Level | NA |
Moisture Packing | NON DRY |