Customization: | Available |
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Application: | Artificial Intelligence, Automotive Electronics, Consumer Electronics, Industry, Integrated Circuit, Solar Cell |
Conductivity Type: | Bipolar Conduction |
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IHV B 3300 V, 1600 A 130 mm diode IGBT module with EC4 - Diode. The best solution for your transportation and industry applications and predestined to be combined with IGBT4 IHV B 3300 V products.
Summary of Features
Benefits
Parametrics | DD1600S33HE4 |
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Configuration | Diodes |
Dimensions (length) | 130 mm |
Dimensions (width) | 140 mm |
Features | Optimized IGBT Diode Ratio |
Housing | IHV B |
IC(nom) / IF(nom) | 1600 A |
IC max | 1600 A |
Qualification | Industrial ; Traction |
Technology | Diode EC 4 |
VCES / VRRM | 3300 V |
VF (Tvj=25°C typ) | 2.9 V |
Voltage Class max | 3300 V |
Sales Product Name | DD1600S33HE4 |
OPN | DD1600S33HE4BPSA1 |
Product Status | active and preferred |
Infineon Package name | AG-IHVB130 |
Standard Package name | |
Completely lead free | no |
Halogen free | no |
RoHS compliant | yes |
Packing Size | 2 |
Packing Type | TRAY |
Moisture Level | NA |
Moisture Packing | NON DRY |